GENERATION OF SURFACE OSCILLATIONS OF SEMICONDUCTOR STRUCTURES BY CHARGED PARTICLE FLOWS
DOI:
https://doi.org/10.26906/SUNZ.2025.1.205-208Keywords:
beam instability of electrostatic oscillations, oscillations, semiconductor components, induced current, electromagnetic radiation, surface oscillationsAbstract
The results of the work determine the degree of influence of flows of charged particles induced by external
electromagnetic radiation on the performance of communication equipment. The aim is to determine the conditions for the
development of hydrodynamic instabilities of electrostatic oscillations in communication system devices containing
semiconductor layers surrounded by media with different electromagnetic properties. The following results are obtained: A
mechanism for the occurrence and development of surface electrostatic oscillation (plasmon) instabilities is proposed under
conditions where the interaction of electromagnetic oscillations and a flow of charged particles generated by external
electromagnetic radiation is ensured by the presence of a boundary. Specific features of the transformation of the spectral
characteristics of the energy of transition radiation associated with the presence of an interface between media with different
electromagnetic properties in open-type radiophysical systems are determined. A new physical mechanism for the generation and
amplification of surface electromagnetic oscillations by flows of charged particles, the characteristics of which are determined by
the properties of the interface between conductive solids, is developed. Conclusion. The criteria for the occurrence and development
of surface plasmon instabilities associated with the nonequilibrium of electronic systems obtained in the work are realized in
conductive solids. Therefore, they can be used in the development of active devices of semiconductor electronics designed to
amplify, generate and convert electromagnetic oscillations in the millimeter and submillimeter ranges. The comparative analysis of
the increments of beam-plasma instabilities of various branches of electrostatic oscillations during the motion of a particle flow
along the normal or along the interface of media, carried out in the work, allows us to solve the problems of optimizing existing
mechanisms for amplifying oscillations in structures used in modern radiophysics (MDS, MOS, various types of p-n junctions).
Downloads
References
1. Рotylitsyn A.P. Transition radiation and diffraction radiation. Seminaries and differences // Nucl. Instrum. Methods Phys.Res. – 2019. - v. 145, - P. 67.
2. Rule D.W., Fiorto R.B., Kimura W.D. Noninterceptive beam diagnostics based on diffraction radiation // A I P Conf.Proc. – 2020. – v.590. – P.510. DOI: https://doi.org/10.1063/1.52327
3. Fiorito R.B., Rule D.W. Diffraction radiation diagnostics for moderate to hight energy beam // Proc.of the 4. Int. Symp. On Radiation From Relativic Electrons. – 2020. – v.155. – P.67.
4. Mkrthyan A.R. Coherent diffraction radiation from an electron bunch. Nucl. Instrum. Methods Phys. Res. B. 2021. v.56., P.69.
5. Aronov I.E., Beletskii N.N. Fundamental steps of group velocity fo 2D surface polaritons in high magnetic field //Chechoslovak Jornal of Physics. –2020.- Vol.46(S5), -P.2473-2474. DOI: https://doi.org/10.1007/BF02570223
6. Perez-Rodrigues F. and Yampolskii V.A. Hesteresis del campo acustico excitado electromagneticamente en una pelicula metalica // X11 Congreso National de la SMCSV. Programa. Cancun, Mexico. – 2020
7. Krowne C.M., Blakey P.A. On the existence of submillimiter wave negative conductance in n – gallium arsenide diodes // J. Appl. Phys. –2021. - t.62 №6 - P. 2257 - 2266. DOI: https://doi.org/10.1063/1.337987
8. Wunsch D.C. and Bell R.R. Determination Of Threshold Failure Of Semiconductor Diodes And Transistors Due To Pullse Voltages // IEEE Trans. – 2020. - Vol. NS-15, No 6. - P. 244-259. DOI: https://doi.org/10.1109/TNS.1968.4325054
9. Schroen W. and Hooper W.W. Failure Mechanisms in Silicon Semiconductors. // Rome Air Development Center Report No. RADS-TR-64-524. - 2020. Also AD 615312.
10. Shilliday T.S. and Vaccaro J. (Editors). // Physics of Failure in Electronics. Vol.5, RADS Series in Reliability, Rome Air Development Center. - June 2021. Also AD. 655397.
11. Queisser H.J. Failure Mechanisms in Silicon Semiconductors. //Final Report Contract AF 30 (602)-2556. Pome Air Development Center, Report No. RADC- TDR-62-533. - 2020.
12. Antinone J. Electrical Overstress Protection for Electronic Devices. - New York. – 2021. – 387р.
Downloads
Published
Issue
Section
License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
